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| NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128C08 EM128C08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview The EM128C08 is an integrated memory device containing a low power 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is fabricated using NanoAmp's advanced CMOS process and high-speed/lowpower circuit technology. This device is designed for very low voltage operation making it quite suitable for battery powered devices. It is also designed for both very low operating and standbycurrents. The device pinout is compatible with other standard 128Kx8 SRAMs. Features * * * Extremely Wide Operating Voltage 1.5 to 3.6 Volts Extended Temperature Range Standard: -20 o to +80oC Fast Cycle Time Standard: < 70 ns @ 3 Volts -10: < 100 ns @ 3 Volts Very Low Operating Current ICC < 1 mA maximum at 2V, 1 Mhz Very Low Data Rentention Voltage 1.2 Volts Minimum Very Low Standby Current 1 A max. @ 55oC 32-Pin TSOP, STSOP, SOP and 48-Pin BGA Packages Available * * * * FIGURE 1: Operating Envelope 20 14 Mhz 15 10 Mhz Typical ICC (mA) 10 5 Mhz 5 2.5 Mhz 1 Mhz 0 1 2 VCC (V) 3 4 Stock No. 23005-07 6/99 1 NanoAmp Solutions FIGURE 1: Pin Configurations OE A10 CE1 D7 D6 D5 D4 D3 VSS D2 D1 D0 A0 A1 A2 A3 EM128C08 NC A16 A14 A12 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 D7 D6 D5 D4 D3 1 A B C D E F G H A5 A4 NC NC NC A1 A3 A2 2 A7 A6 A12 NC NC D1 A0 D0 3 4 5 6 A9 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 VCC WE A14 A15 A13 A11 NC NC NC NC D2 VSS NC CE2 NC NC NC D4 D3 NC NC D5 D7 D6 A8 NC NC CE1 OE A10 EM128C08 STSOP, TSOP A6 A5 A4 A3 A2 A1 A0 D0 EM12808 SOP 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 D1 D2 VSS A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 48 Pin BGA (top) 7mm x 9mm FIGURE 2: Functional Block Diagram Input/ Data I/O Output Mux and D0 - D7 Buffers Address Inputs A0 - A16 Address Decode Logic 128K x 8 RAM Array CE1 CE2 WE OE Pin Name A0-A16 D0-D7 CE1 CE2 OE Control Logic TABLE 1: Pin Description Pin Function Address Inputs Data Inputs/Outputs Chip Enable (Active Low) Chip Enable (Active High) Output Enable (Active Low) Pin Name WE VCC VSS NC Pin Function Write Enable (Active Low) Power Ground Not Connected (Do not connect signal) TABLE 2: Functional Description CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X L H D0-D7 High Z High Z Data In Data Out High Z MODE Standby Standby Write Read Active POWER Standby Standby Active -> Standby* Active -> Standby* Standby* *The device will consume active power in this mode whenever addresses are changed Stock No. 23005-07 6/99 2 NanoAmp Solutions TABLE 3: Absolute Maximum Ratings* Item Voltage on any pin relative to V SS Voltage on VCC Supply Relative to V SS Power Dissipation Storage Temperature Operating Temperature Symbol VIN,OUT VCC PD TSTG TA Rating -0.3 to VCC+0.3 -0.3 to 4.0 500 -40 to +125 -20 to +80 EM128C08 Unit V V mW o o C C *Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TABLE 4: Operating Characteristics (Over the Specified Temperature Range) EM128C08 Item Operating Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Operating Supply Current (Note 1) Standby Current (Note 2), and Data Retention Current Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC IOH = -0.1mA IOL = 0.1mA VIN = 0 to V CC OE or CE1 = VCC or CE2 = 0 VIN = VCC or 0V CE1 = 0 and CE2 = V CC VIN=VCC or 0V, tA=25 oC ISB,IDR VIN=VCC or 0V, tA=55 VIN=VCC or 0V, tA=80 oC oC Test Conditions Min. 1.5 CE1 = VCC or CE2 = 0 1.2 0.7VCC -0.3 0.8*VCC 0.2*VCC 0.5 0.5 0.5*f*V 0.2 1 10 VCC+0.3 0.3*VCC Max. 3.6 Unit V V V V V V A A mA A Note 1. Operating current is a linear function of operating frequency and voltage. You may calculate operating current using the formula shown with operating frequency (f) expressed in Mhz and operating voltage (V) in volts. Example: Operating at 2 Mhz at 3.0 volts will draw a maximum current of 0.5*2*3 = 3.0 mA. Note 2. This device assumes a standby mode if either CE1 is disabled (high) or CE2 is disabled (low). It will also automatically go into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of CE1 or CE2. In order to achieve low standby current in the enabled mode (CE1 low and CE2 high), all inputs must be within 0.2 volts of either V CC or VSS. TABLE 5: Capacitance* Item Input Capacitance I/O Capacitance Symbol C IN C I/O Test Condition VIN = 0V, f = 1 Mhz, T A = VIN = 0V, f = 1 Mhz, T A = 25oC 25oC Min Max 5 5 Unit pF pF Note: These parameters are verified in device characterization and are not 100% tested Stock No. 23005-07 6/99 3 NanoAmp Solutions EM128C08 TABLE 6: Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Operating Temperature - Standard Version Operating Temperature - Commercial Version Output Load 0.1VCC to 0.9 VCC 5ns 0.5VCC -40 to +85 oC -20 to +80 oC CL = 50pF TABLE 7: Timing - EM128C08 (Standard Version) Only 1.5 to 3.6 V 1.8 to 3.6 V 2.7 to 3.6 V 3.0 to 3.6 V Item Read Cycle Time Address Access Time Chip Enable Access Time Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Address Set-Up Time Write Pulse Width Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol Min tRC tAA tCE tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAW tAS tWP tWR tWHZ tDW tDH tOW 0 200 0 10 0 0 0 0 10 500 500 500 0 250 0 50 0 80 0 10 100 100 500 500 500 100 0 0 0 0 10 200 200 200 0 100 0 40 0 40 0 10 50 50 Max Min 200 200 200 50 0 0 0 0 10 85 85 85 0 40 0 20 0 30 0 10 20 20 Max Min 85 85 85 20 0 0 0 0 10 70 70 70 0 35 0 20 20 20 Max Min 70 70 70 20 Max ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Unit Stock No. 23005-07 6/99 4 NanoAmp Solutions EM128C08 TABLE 8: Timing - EM128C08-10 Version 1.5 to 3.6 V 1.8 to 3.6 V 2.7 to 3.6 V 3.0 to 3.6 V Item Read Cycle Time Address Access Time Chip Enable Access Time Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Address Set-Up Time Write Pulse Width Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol Min tRC tAA tCE tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAW tAS tWP tWR tWHZ tDW tDH tOW 0 300 0 10 0 0 0 0 10 500 500 500 0 300 0 100 0 80 0 10 100 100 500 500 500 100 0 0 0 0 10 300 300 300 0 100 0 60 0 40 0 10 60 60 Max Min 300 300 300 60 0 0 0 0 10 120 120 120 0 50 0 25 0 30 0 10 25 25 Max Min 120 120 120 25 0 0 0 0 10 100 100 100 0 40 0 25 25 25 Max Min 100 100 100 25 Max ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Unit FIGURE 3: Read Cycle Timing (WE = VIH) tRC A0-A16 tAA tCE CE1/CE2 tLZ OE tOLZ D0-D7 Data Valid tOH tOE Enable Valid tOHZ tHZ Stock No. 23005-07 6/99 5 NanoAmp Solutions FIGURE 4: Write Cycle Timing (OE clock) tWC A0-A16 tAW OE tCW CE1/CE2 Enable Valid tWP WE tAS tWHZ tDW Data In tOHZ Data Out High-Z Data tOW tDH tWR EM128C08 FIGURE 5: Write Cycle Timing (OE fixed) tWC A0-A16 tAW tCW CE1/CE2 tAS WE tDW Data In tWHZ Data Out High-Z Data Valid tOW Enable Valid tWP tDH tOH tWR Stock No. 23005-07 6/99 6 NanoAmp Solutions TABLE 9: Ordering Information Part Number EM128C08S EM128C08T EM128C08N EM128C08B EM128C08S-10 EM128C08T-10 EM128C08N-10 EM128C08B-10 Package 32 pin SOP 32 pin TSOP 32 pin STSOP 48 pin BGA 32 pin SOP 32 pin TSOP 32 pin STSOP 48 pin BGA Temperature Range -20 to +80 oC -20 to +80 C -20 to +80 C -20 to +80 C -20 to +80 C -20 to +80 C -20 to +80 C -20 to +80 C o o o o o o o EM128C08 Voltage Range 1.5 to 3.6 V 1.5 to 3.6 V 1.5 to 3.6 V 1.5 to 3.6 V 1.5 to 3.6 V 1.5 to 3.6 V 1.5 to 3.6 V 1.5 to 3.6 V Speed (@ 3V+) 70 ns 70 ns 70 ns 70 ns 100 ns 100 ns 100 ns 100 ns TABLE 10: Revision History Revision # 01 02 03 04 05 06 07 Date Nov. 1, 1997 Feb. 2, 1998 Feb. 15, 1998 Apr. 1, 1998 Sep. 1, 1998 May 6, 1999 June 3, 1999 Initial Formal Release Corrected Miscellaneous Errata Modified Cycle Time and Related Parameters from 150 to 200 nS at 1.8 volts Added SOP option, Increased standby current Clarified CE2 Timing in Figures 3 to 5 Modified Operating Envelope Figure Reduced product versions to Standard and Commercial Added BGA option, Extended "standard" voltage range to 1.5 Volts min. Standardized on voltage range of 1.5 to 3.6 volts Standardized on temperature range of -20 to 80 oC Revised specifications to show -10 instead of "C" for 100 ns part Change Description Stock No. 23005-07 6/99 7 |
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